g eneral d escription the IRF3205 is n - channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm, load switching . features v ds =55v; i d =105a@ v gs = 10 v ; r ds(on) <6.0m @ v gs = 10 v u ltra l ow on - resistance h igh uis and uis 100% t est application hard switched and high frequency circuits uninterruptible power supply table 1. a bsolute maximum r atings (ta=25 ) symbol parameter value unit v ds drain - source voltage ( v gs= 0v) 55 v v gs gate - source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 105 a i d (dc) drain current (dc) at tc=100 100 a i dm (pluse) drain current - continuous@ current - pulsed (note 1 ) 420 a dv/dt peak d iode r ecovery v oltage 30 v /n s p d maximum power dissipation (tc=25 ) 139 w derating factor 0.926 w / e as single p ulse a valanche e nergy (note 2 ) 625 mj t j ,t stg operating junction and storage temperature range - 55 to 175 note s 1. repetitive rating: pulse width limited by maximum junction temperature 2. e as condition: t j =25 , v dd =40v,v b g b =10v, r g =25 schematic diagram v ds = 55 v i d = 105 a r ds( on) = 5.0 m ? to-220cb top view inverter application ? IRF3205 pb free plating product IRF3205 pb n-channel trench process power mosfet transistor ? 2013 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/5 rev.05 g d s
table 2. t hermal characteristic symbol parameter value unit r ? jc thermal resistance,junction - to - case 1.08 /w table 3. e lectrical characteristics (ta=25 unless otherwise noted) symbol parameter condition s min typ max unit on/off states bv ds s drain - source breakdown voltage v gs =0v i d =250a 55 v i dss zero gate voltage drain current (tc=25 ) v ds = 55 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 55 v,v gs = 0 v 1 a i gss gate - body leakage current v gs = 20 v,v ds =0v 100 na v gs (th) gate threshold voltage v ds =v gs ,i d =250a 2 4 v r ds(on) drain - source on - state resistance v gs = 10 v, i d =4 0 a 5.0 6.0 m dynamic characteristics g fs forward transconductance v ds = 25 v,i d = 40 a 25 s c iss input capacitance 5905 pf c oss output capacitance 905 pf c rss reverse transfer capacitance v ds = 25 v,v gs =0v, f =1.0mhz 548 pf q g total gate charge 94 nc q gs gate - source charge 18 nc q gd gate - drain charge v ds = 30 v,i d = 30 a, v gs = 10 v 25 nc s witching t imes t d(on) turn - on delay time 15 ns t r turn - on rise time 18 ns t d(off) turn - off delay time 31 ns t f turn - off fall time v dd = 3 0v ,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 38 ns source - d rain d iode characteristics i sd source - drain current(body diode) 105 a i sdm pulsed source - drain current(body di ode) 420 a v sd forward on voltage (note 1 ) t j =25 ,i sd =40a,v gs =0v 0.87 0.95 v t rr reverse recovery time (note 1 ) 56 ns q rr reverse recovery charge (note 1 ) t j =25 ,i f =75a di/dt=100a/ s 113 nc t on forward turn - on time intrinsic turn - on time is negligible(turn - on is dominated by l s +l d ) note s 1. pulse test: pulse width 300s, duty cycle 1.5 % , r g =25 , starting t j =25 ? IRF3205 ? 2013 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/5 rev.05
test c i r c uit 1 ) e a s t e s t circuits 2 ) gate c h a rge t est cir c uit: 3) s w itch time test circui t ? IRF3205 ? 2013 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/5 rev.05
typical electrical and t h ermal charac t eristics (curves) figure1. output characteristics figure2. transfer characteristics v ds drain - source v ol t age (v) v gs gate - source v ol t age (v) figure3. rdson v s drain c urrent figure4. rdson v s j unction i d - drain c u rrent (a) t j - junction t emperat u re ( ) i d - drain current (a) i d - drain current (a) r ds(on) on - resistance (m ) normalized on - resistance v gs gate - source voltage (v) 10 8 6 4 2 0 v sd source - drain v ol t a g e (v) figure5. gate charge figure6. source - drain diode forward ? IRF3205 ? 2013 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 4/5 rev.05
figure7. capacitance vs vds figure8. safe operation area v ds drain - source v o l t age (v) figure9. bvd ss vs junction temperature figure10. vgs(th) vs junction temperature t j - junction t emperat u re ( ) t j - junction t emperat u re ( ) figure11. normalized maximum t ransient thermal impedance c capacitance (pf) i d - drain current (a) normalized bv dss r (t), normalized effective transient thermal impedance 0 5 10 15 20 25 1000 2000 3000 4000 5000 6000 7000 ciss coss crss v ds drain - source v ol t age (v) 0 ? IRF3205 ? 2013 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 5/5 rev.05
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